收藏本站
MCP14E9/10/11
TABLE 4-1:
ENABLE PIN LOGIC
MCP14E9
MCP14E10
MCP14E11
ENB_A
H
H
H
H
L
ENB_B
H
H
H
H
L
IN A
H
H
L
L
X
IN B
H
L
H
L
X
OUT A
L
L
H
H
L
OUT B
L
H
L
H
L
OUT A
H
H
L
L
L
OUT B
H
L
H
L
L
OUT A
L
L
H
H
L
OUT B
H
L
H
L
L
4.5
PCB Layout Considerations
5V
A proper PCB layout is important in a high-current, fast
switching circuit, to provide proper device operation
ENB_x
0V
V EN_H
V EN_L
and robustness to the design. The PCB trace loop area
and inductance should be minimized by the use of
ground planes or trace under MOSFET gate drive sig-
nals, separate analog and power grounds, and local
driver decoupling.
V DD
t D3
t D4
Placing a ground plane beneath the MCP14E9/10/11
will help as a radiated noise shield, as well as providing
some heat sinking for power dissipated within the
90%
device.
OUT x
4.6
Power Dissipation
0V
10%
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements ( Equation 4-1 ).
FIGURE 4-3:
Enable Timing Waveform.
EQUATION 4-1:
P T = P L + P Q + P CC
4.4
Decoupling Capacitors
Where:
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge capaci-
tive loads quickly. For example, approximately 2.0A are
needed to charge an 1800 pF load with 18V in 15 ns.
P T
P L
P Q
P CC
=
=
=
=
Total Power Dissipation
Load Power Dissipation
Quiescent Power Dissipation
Operating Power Dissipation
To operate the MOSFET driver over a wide frequency
range, with low supply impedance, a ceramic and low-
4.6.1
CAPACITIVE LOAD DISSIPATION
ESR film capacitors are recommended to be placed in
parallel, between the driver, V DD and GND. A 1.0 μF,
low-ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins, 6 and 3, should be used. These
capacitors should be placed close to the driver to mini-
mize circuit board parasitics and provide a local source
for the required current.
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
EQUATION 4-2:
Where:
P L = f × C T × V DD
2
f = Switching Frequency
C T = Total Load Capacitance
V DD = MOSFET Driver Supply Voltage
DS25005A-page 14
? 2011 Microchip Technology Inc.
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MCP1640RD-4ABC BOARD REF DES AAAA BAT BOOST
MCP3906AT-E/SS IC ENERGY METERING 24SSOP
MCP3907T-I/SS IC ENERGY METER W/OSC 24SSOP
MCZ33198EF IC TMOS DRIVER AUTO HISIDE 8SOIC
MCZ33285EFR2 IC TMOS DRIVER DUAL HISIDE 8SOIC
MCZ33927EK IC FET PRE-DRIVER 3PH 54-SOIC
MCZ33937EKR2 IC PRE-DRIVER 3PHASE 54-SOIC
MDN2BL3GRAS MOTOR BRUSHED DC 2V 2753RPM
相关代理商/技术参数
MCP14E9T-E/SN 功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP-14-I9-LL 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:MatchCon
MCP-14-TI9-LL 制造商:YAMAICHI 制造商全称:Yamaichi Electronics Co., Ltd. 功能描述:MatchCon
MCP1525 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.5V and 4.096V Voltage References
MCP1525_05 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.5V and 4.096V Voltage References
MCP1525_13 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.5V and 4.096V Voltage References
MCP1525I/TO 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2.5V and 4.096V Voltage References
MCP1525-I/TO 功能描述:基准电压& 基准电流 2.5V RoHS:否 制造商:STMicroelectronics 产品:Voltage References 拓扑结构:Shunt References 参考类型:Programmable 输出电压:1.24 V to 18 V 初始准确度:0.25 % 平均温度系数（典型值）:100 PPM / C 串联 VREF - 输入电压（最大值）: 串联 VREF - 输入电压（最小值）: 分流电流（最大值）:60 mA 最大工作温度:+ 125 C 封装 / 箱体:SOT-23-3L 封装:Reel